TEA1750_2
?NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 15 December 2008
19 of 29
NXP Semiconductors
TEA1750
GreenChip III SMPS control IC
[1] Equivalent to discharging a 100 pF capacitor through a 1.5 k& series resistor.
[2] Equivalent to discharging a 200 pF capacitor through a 0.75 礖 coil and a 10 & resistor.
9. Thermal characteristics
10. Characteristics
General
P
tot
total power dissipation
T
amb
< 75 癈
-
0.6
W
T
stg
storage temperature
55
+150
癈
T
j
junction temperature
40
+150
癈
ESD
V
ESD
electrostatic discharge
voltage
class 1
human body model
pins 1 to 13
[1]
-
2000
V
pin 16 (HV)
[1]
-
1500
V
machine model
[2]
-
200
V
charged device model
-
500
V
Table 3.
Limiting values &continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Table 4.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air; JEDEC test board
124
K/W
Table 5.
Characteristics
T
amb
= 25 癈; V
CC
= 20 V; all voltages are measured with respect to ground (pin 2); currents are positive when owing into
the IC; unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Start-up current source (pin HV)
I
HV
current on pin HV
V
HV
> 80 V;
V
CC
< V
trip
;
V
th(UVLO)
< V
CC
< V
startup
-
1
-
mA
V
trip
< V
CC
< V
th(UVLO)
-
5.4
-
mA
with auxiliary supply
8
20
40
礎
V
BR
breakdown voltage
650
-
-
V
Supply voltage management (pin V
CC
)
V
trip
trip voltage
0.55
0.65
0.75
V
V
startup
start-up voltage
21
22
23
V
V
th(UVLO)
undervoltage lockout
threshold voltage
14
15
16
V
V
start(hys)
hysteresis of start voltage
during start-up phase
-
300
-
mV
V
hys
hysteresis voltage
V
startup
V
th(UVLO)
6.3
7
7.7
V
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